The 10th Gen V-NAND device that Samsung presented at ISSCC is a 3D TLC NAND device with over 400 active layers, a 1 Tb capacity per die, and a 5.6 GT/s interface speed. As the new

South Korea's NAND flash leaders, Samsung and SK Hynix, face a potential threat as Yangtze Memory Technologies Corp. (YMTC) takes the lead in hybrid bonding for 400+ layer 3D NAND. YMTC continues to enhance its technology while aggressively securing patents.

Samsung Electronics plans to use patents from China's YMTC in the manufacturing process for next-generation NAND flash memory. It is estimated that Samsung Electronics entered into this contract to avoid the patent dispute related to 'hybrid bonding,' which is expected to be essential for the production of 400-layer NAND flash memory.